Structural and optical investigations of nc-Si: H thin films prepared by hot-wire method

被引：0

作者：

Waman, V. S. ^{[1
]}

Kamble, M. M. ^{[1
]}

Pramod, M. R. ^{[1
]}

Funde, A. M. ^{[1
]}

Sathe, V. G. ^{[2
]}

Gosavi, S. W. ^{[3
]}

Jadkar, S. R. ^{[3
]}

机构：

[1] Univ Pune, Sch Energy Studies, Pune 411007, Maharashtra, India

[2] UGC DAE CSR, Indore 452017, India

[3] Univ Poona, Dept Phys, Pune 411007, Maharashtra, India

来源：

OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: INTERNATIONAL CONFERENCE ON LIGHT | 2011年 / 1391卷

关键词：

Hot-wire deposition; Nanocrystalline thin films; Structural properties; Optical properties; CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-SILICON; GLOW-DISCHARGE; RAMAN-SPECTRA; MICROSTRUCTURE; PARAMETERS; STRESS; PLASMA;

D O I：

10.1063/1.3646809

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Structural and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) films have been carefully studied as a function of hydrogen dilution of silane (R-H). Raman spectroscopic analysis showed that with increase in RH, the crystalline fraction in the films increases whereas crystallite size remains almost constant (similar to 8.7 nm). Also, the Raman spectra shows a blue shift of transverse optic (TO) phonon mode indicating that the films are stressed and the induced stress is compressive. The FTIR spectroscopic analysis revealed that the hydrogen predominantly incorporated in Si-H-2 and (Si-H-2)(n) bonding configuration. We have obtained high band gap (1.88-2.07 eV) at low hydrogen content (<2.5 at. %) over the entire range of R-H studied at reasonably high deposition rate (7.4-9.5 angstrom/s).

引用

页数：3

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