Electronic excitations and optical properties of YbFe2O4 thin films

被引：2
|
作者：
Rai, R. C. [1 ]
Hinz, J. [1 ,3 ]
Pascolini, M. [1 ]
Sun, F. [2 ]
Zeng, H. [2 ]
机构：
[1] SUNY Buffalo State, Dept Phys, Buffalo, NY 14222 USA
[2] Univ Buffalo SUNY, Dept Phys, Buffalo, NY 14260 USA
[3] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
来源：
THIN SOLID FILMS | 2019年 / 673卷
基金：
美国国家科学基金会;
关键词：
Ytterbium ferrite; Thin film; Electronic excitation; Band gap; MAGNETIC-PROPERTIES; PHASE-TRANSITIONS; TEMPERATURE; GROWTH; ORDER;
D O I：
10.1016/j.tsf.2019.01.035
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the structural, optical properties, and electronic excitation spectra of the YbFe2O4 thin film deposited on (0001) sapphire substrates. The optical spectra of a YbFe2O4 thin film show several electronic transitions, dominated by Fe d to d on-site electronic transitions as well as O 2p to Fe 3d, Yb 6s, and Yb 5d charge-transfer electronic transitions. The direct energy band gap of YbFe2O4 has been found to be 1.40 +/- 0.01 eV at 300 K. Moreover, the electronic transitions centered at 1.75 eV and 2.41 eV exhibit strong temperature dependence with a discontinuity at similar to 190 +/- 10 K, indicating evidence for a structural instability in the system. The optical spectra of YbFe2O4 have been analyzed and also compared with that of isostructural YbFe2O4 and LuFe2O4.
引用
收藏
页码：57 / 61
页数：5
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