Low Noise Amplifier for 180 GHz Frequency Band

被引：0

作者：

Kangaslahti, Pekka ^{[1
]}

Pukala, David ^{[1
]}

Gaier, Todd ^{[1
]}

Deal, William ^{[2
]}

Mei, Xiaobing ^{[2
]}

Lai, Richard ^{[2
]}

机构：

[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA

[2] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

基金：

美国国家航空航天局;

关键词：

high electron mobility transistors (HEMTs); indium phosphide; millimeter wave field-effect transistor (FET) amplifiers; monolithic millimeter wave integ low noise amplifier; MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurement of the humidity profile of the atmosphere is highly important for atmospheric science and weather forecasting. This sounding measurement is obtained at frequencies close to the resonance frequency of water molecules (183 GHz). We have designed and characterized a MMIC low noise amplifier that will increase the sensitivity of sounding instruments at these frequencies. This study demonstrated a factor of two improvement in MMIC LNA noise temperature at this frequency band. The measured packaged InP monolithic millimeter-wave integrated circuit (MMIC) amplifier had a noise temperature of NT=390 K (NF=3.7 dB). The circuit was fabricated in 35 nm InP high electron mobility transistor (HEMT) process.

引用

页码：450 / +

页数：2

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