Impact of exciton dissociation on the metal-enhanced photoluminescence in ZnO/ZnMgO multiple quantum wells

被引：0
|
作者：
He, Haiping [1 ]
Song, Shiyan [1 ]
Zhang, Honghai [1 ]
Pan, Xinhua [1 ]
Huang, Jingyun [1 ]
Ye, Zhizhen [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 121卷 / 03期
关键词：
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; THIN-FILMS; ZNO; EMISSION; HETEROSTRUCTURES; PLASMONICS; SAPPHIRE; GROWTH;
D O I：
10.1007/s00339-015-9491-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated metal-enhanced excitonic emission from ZnO/ZnMgO multiple quantum wells (MQWs) grown by molecular beam epitaxy. Capping of Al nanoparticles results in 1.5-fold enhancement of photoluminescence (PL) at room temperature. Temperature-dependent PL analysis suggests that exciton dissociation acts as an additional non-radiative recombination channel when the MQWs are capped with metal. The non-radiative recombination rate is found to be larger than the radiative one by 21-fold. This explains the relatively low enhancement ratio of PL although significant surface plasmon coupling is present.
引用
收藏
页码：1039 / 1044
页数：6
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