Negative Magnetoresistance in a Vertical Single-Layer Graphene Spin Valve at Room Temperature

被引：44

作者：

Singh, Arun Kumar

Eom, Jonghwa ^{[1
]}

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

single-layer graphene; spin valve; magnetoresistance; vertical transport; spintronics; TUNNEL-JUNCTIONS; SPINTRONICS; TRANSPORT; DEVICES;

D O I：

10.1021/am4049145

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single-layer graphene (SLG) is an ideal material for spintronics because of its high charge-carrier mobility, long spin lifetime resulting from the small spin orbit coupling, and hyperfine interactions of carbon atoms. Here, we report a vertical spin valve with SLG with device configuration Co/SLG/Al2O3/Ni. We observed negative magnetoresistance (-0.4%) for the Co/SLG/Al2O3/Ni junction at room temperature. However, the Co/Al2O3/Ni junction, which is without graphene, shows positive magnetoresistance. The current voltage (I V) characteristics of both Co/SLG/Al2O3/Ni and Co/Al2O3/Ni junctions are nonlinear, and this reveals that charge transport occurs by a tunneling mechanism. We have also explained the reason for negative magnetoresistance for the Co/SLG/Al2O3/Ni junction.

引用

收藏

页码：2493 / 2496

页数：4

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