Magnetoplastic effect in InSb

被引：19

作者：

Darinskaya, EV

Petrzhik, EA

Erofeev, SA

Kisel', VP

机构：

[1] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 1999年 / 70卷 / 04期

关键词：

D O I：

10.1134/1.568170

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed dislocation motion in InSb semiconductor crystals under the action of a static magnetic field in the absence of a mechanical load. The dependence of the average dislocation travel distance and of the relative number of diverging and converging half-loops on the magnetic induction and the "magnetic treatment" time is obtained. The activation energy of the motion of diverging dislocations in a magnetic field in the temperature range 120-250 degrees C is estimated. Possible reasons for the observed phenomenon are discussed. (C) 1999 American Institute of Physics. [S0021-3640(99)01316-X].

引用

页码：309 / 313

页数：5

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