Formation of single domain Si(001)4 x 3-In surface by surface electromigration

被引：2

作者：

Kono, S ^{[1
]}

Goto, T ^{[1
]}

Shimomura, M ^{[1
]}

Abukawa, T ^{[1
]}

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 9808577, Japan

来源：

SURFACE SCIENCE | 1999年 / 438卷 / 1-3期

关键词：

SEM; RHEED; diffusion and migration; surface electromigration; indium; silicon; metal-semiconductor interfaces;

D O I：

10.1016/S0039-6028(99)00555-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of single-domain Si(001)4 x 3-In surfaces with several degrees of domain ratio is reported. A single-domain Si(001)2 x 1 surface was used as a substrate. A single-domain Si(001)3 x 4-In surface with a good domain ratio is found, the directional relationship of which is such that the threefold direction of 3 x 4-In corresponds to the twofold direction of substrate. Two other 4 x 3-In surfaces with poor domain ratios are found, the directional relationship of which is such that the fourfold direction corresponds to the twofold direction of substrate. The formation of these 4 x 3-In surfaces is explained by the electromigration of surface Si, the amount of which is dependent on the temperature of direct current annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：83 / 90

页数：8

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