Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

被引：0

作者：

Evtikhiev, VP ^{[1
]}

Konstantinov, OV ^{[1
]}

Kotel'nikov, EY ^{[1
]}

Matveentsev, AV ^{[1
]}

Titkov, AN ^{[1
]}

Shkol'nik, AS ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 02期

关键词：

Microscopy; GaAs; Atomic Force Microscopy; Energy Level; Cluster Model;

D O I：

10.1134/1.1458515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An approach to the processing of images obtained by atomic force microscopy is proposed. An example of determining the parameters of InAs clusters formed on the vicinal surface of a GaAs crystal is presented. Using the proposed technique within the framework of the previously developed spherical cluster model, it is possible to determine the energy levels of electrons and holes in InAs quantum dots. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：139 / 141

页数：3

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