Thin film interreaction of Al/Ag analyzed by tomographic atom probe

被引:35
作者
Schleiwies, J
Schmitz, G
机构
[1] Univ Gottingen, Inst Met Phys, D-37073 Gottingen, Germany
[2] Univ Gottingen, SFB 345, D-37073 Gottingen, Germany
[3] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2002年 / 327卷 / 01期
关键词
Ag/Al; thin film interreaction; atom probe tomography; tomographic atom probe; sputter deposition;
D O I
10.1016/S0921-5093(01)01883-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A nanoanalytical study of Ag/Al interreaction by atom probe tomography is presented, For thia, metallic thin films are deposited on tungsten substrate tips by ion beam sputtering. The Al/Ag reaction couple qualifies its it particularly clear model system due to its simple phase diagram and the identical lattice structure of both reacting materials, Nevertheless, the tomographical analysis demonstrates that the reaction does not proceed on a planar layer geometry. Instead. after annealing at 100 degreesC for 15 min, a three-dimensional reaction morphology develops caused by fast grain boundary transport. During further annealing, at first a metastable phase of 67 at.% Al is observed. The expected equilibrium Ag2Al is only formed in late reaction stages by a precipitation process. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:94 / 100
页数:7
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