Effects of oxidation curing and sintering temperature on the microstructure formation and heat transfer performance of freestanding polymer-derived SiC films for high-power LEDs

Effects of oxidation cross-linking and sintering temperature on the microstructure evolution, thermal conductivity and electrical resistivity of continuous freestanding polymer-derived SiC films were investigated. The as-received films consisting of beta-SiC nanocrystals embedded in amorphous SiOxCy and free carbon nanosheets were fabricated via melt spinning of polycarbosilane (PCS) precursors and cured for 3 h/10 h followed by pyrolysis from 900 degrees C to 1200 degrees C. Results reveal that nanoscale structure (beta-SiC/SiOxCy/C-free) provides an ingenious strategy for constructing highly thermal conductive, highly insulating and highly flexible complexes. In particular, the 3 h-cured films sintered at 1200 degrees C with satisfying thermal conductivity (46.8 W m(-1) K-1) and electrical resistivity (2.1 x 10(8) Omega m) are suitable for the realization of high-performance substrates. A remarkable synergistic effect (lattice vibration of beta-SiC nanocrystals and close-packed SiOxCy free-electron heat conduction of beta-SiC and free carbon, and supporting role of oxygen vacancy) contributing to thermal conductivity improvement is proposed based on the analysis of microstructure, intrinsic properties and simulations. Eventually, the SiC films without additional dielectric layers are directly silk-screen printed with high-temperature silver paste and used as heat dissipation substrates for high-power LED devices via chip-on-board (COB) package. The final devices can emit bright light with low-junction temperature (52.6 degrees C) and good flexibility owing to the mono-layer SiC substrate with low thermal resistance and desirable mechanical properties. This work offers an effective approach to design and fabricate flexible heat dissipation ceramic substrates for thermal management in advanced electronic packaging fields.