Electron-impact single and double ionization of tin ions

被引：0

作者：

Borovik, A., Jr. ^{[1
]}

Hillenbrand, P. -M. ^{[1
]}

Rudolph, J. ^{[1
]}

Gharaibeh, M. F. ^{[2
]}

Rausch, J. ^{[1
]}

Huber, K. ^{[1
]}

Schippers, S. ^{[1
]}

Mueller, A. ^{[1
]}

机构：

[1] Univ Giessen, Inst Atom & Mol Phys, D-35392 Giessen, Germany

[2] Jordan Univ Sci & Technol, Phys Dept, Irbid 22110, Jordan

来源：

XXVII INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC AND ATOMIC COLLISIONS (ICPEAC 2011), PTS 1-15 | 2012年 / 388卷

关键词：

D O I：

10.1088/1742-6596/388/6/062023

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Motivated by the requirements for modeling EUV light sources for semiconductor lithography, a systematic study of electron-impact ionization cross sections of Snq+ ions (q = 1, ..., 13) in the energy range up to 1000 eV was performed. Detailed analysis of all in all 25 measured cross-section functions revealed strong contributions of indirect ionization mechanisms which need to be taken into account in EUV-source plasma modeling.

引用

页数：1