Research on lifetime distribution and reliability of IGBT module based on accelerated life test and K-S test

被引：2

作者：

Wu, Huawei ^{[1
,2
]}

Ye, Congjin ^{[1
,2
]}

Zhang, Yuanjin ^{[1
,2
]}

Hou, Fei ^{[3
]}

Nie, Jingquan ^{[1
]}

机构：

[1] Hubei Univ Arts & Sci, Hubei Key Lab Power Syst Design & Test Elect Vehi, Xiangyang 441053, Peoples R China

[2] Hubei Univ Arts & Sci, Sch Automot & Traff Engn, Xiangyang 441053, Peoples R China

[3] Dong Feng Automobile Elect Co Ltd, Xiangyang 441099, Peoples R China

来源：

INTERNATIONAL JOURNAL OF ENGINEERING SYSTEMS MODELLING AND SIMULATION | 2019年 / 11卷 / 01期

关键词：

insulated gate bipolar transistor; IGBT; logarithmic normal distribution; accelerated life test analysis; Kolmogorov-Smirnov test; acceleration factor; POWER; PREDICTION;

D O I：

10.1504/IJESMS.2019.098903

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To realise lifetime distribution and reliability analysis of IGBT, a new research method for IGBT module lifetime was proposed based on double stress accelerated life test and K-S test. In this method, the lifetime of IGBT module was assumed to be logarithmic normal distribution. Then the K-S test was used to test the distribution of the logarithmic normal and Weibull on a set of the junction temperature and vibration double stress constant stress accelerated life test data of IGBT module for electric vehicle. And another set of IGBT accelerated life data was simulated and analysed by using the accelerated life test data analysis software. The results show that the lifetime of IGBT modules under ALTA accelerated life simulation is still confirmed to the lognormal distribution, which further validates the correctness of the proposed assumption. This method has certain guiding significance to the life distribution and reliability analysis of IGBT module.

引用

页码：1 / 10

页数：10

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