Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

被引：3
作者：
Sleptsov, E. V. [1 ,2 ]
Chernykh, A. V. [1 ,2 ]
Chernykh, S. V. [1 ,2 ]
Dorofeev, A. A. [1 ]
Gladysheva, N. B. [1 ]
Kondakov, M. N. [1 ,2 ]
Sleptsova, A. A. [1 ,2 ]
Panichkin, A. V. [2 ]
Konovalov, M. P. [2 ]
Didenko, S. I. [2 ]
机构：
[1] Joint Stock Co Sci & Prod Enterprise Pulsar, Moscow, Russia
[2] Natl Univ Sci & Technol MISiS, Moscow, Russia
来源：
18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷
关键词：
N-TYPE GAN; CHEMICAL-VAPOR-DEPOSITION; MOBILITY TRANSISTORS; GALLIUM NITRIDE; CONTACTS; DIODES; MORPHOLOGY; NICKEL; FILMS; METAL;
D O I：
10.1088/1742-6596/816/1/012039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigation of the thermal annealing effect on Schottky barrier parameters and the leakage current of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures has been performed. Improvement of Schottky barrier parameters after annealing of the investigated metallization schemes was observed. Ni/Au and Mo/Au contacts drastically degrade after annealing at the temperatures higher than 400 degrees C, whereas the Ni/Mo/Au contact exhibits excellent parameters after 500 degrees C annealing ( q phi(b) = 1.00 eV, n = 1.13. I-leak = 5 mu A).
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页数：6
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