Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

被引：3

作者：

Sleptsov, E. V. ^{[1
,2
]}

Chernykh, A. V. ^{[1
,2
]}

Chernykh, S. V. ^{[1
,2
]}

Dorofeev, A. A. ^{[1
]}

Gladysheva, N. B. ^{[1
]}

Kondakov, M. N. ^{[1
,2
]}

Sleptsova, A. A. ^{[1
,2
]}

Panichkin, A. V. ^{[2
]}

Konovalov, M. P. ^{[2
]}

Didenko, S. I. ^{[2
]}

机构：

[1] Joint Stock Co Sci & Prod Enterprise Pulsar, Moscow, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow, Russia

来源：

18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷

关键词：

N-TYPE GAN; CHEMICAL-VAPOR-DEPOSITION; MOBILITY TRANSISTORS; GALLIUM NITRIDE; CONTACTS; DIODES; MORPHOLOGY; NICKEL; FILMS; METAL;

D O I：

10.1088/1742-6596/816/1/012039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigation of the thermal annealing effect on Schottky barrier parameters and the leakage current of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures has been performed. Improvement of Schottky barrier parameters after annealing of the investigated metallization schemes was observed. Ni/Au and Mo/Au contacts drastically degrade after annealing at the temperatures higher than 400 degrees C, whereas the Ni/Mo/Au contact exhibits excellent parameters after 500 degrees C annealing ( q phi(b) = 1.00 eV, n = 1.13. I-leak = 5 mu A).

引用

页数：6

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