Thermal conductivity of self-reinforced silicon nitride containing large grains aligned by extrusion pressing

被引:11
作者
Okamoto, Y
Hirosaki, N
Ando, M
Munakata, F
Akimune, Y
机构
[1] Materials Research Laboratory, Nissan Motor Co., Ltd., Yokosuka-shi, Kanagawa 237, 1, Natsushima-cho
关键词
beta-Si3B4; thermal conductivity; microstructure; grain growth; extrusion; orientation;
D O I
10.2109/jcersj.105.631
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
beta-Si3N4 containing 0.5 mol%Y2O3 and 0.5 mol%Nd2O3 was seeded with 5 mass% beta-Si3N4 whisker with high aspect ratio and extruded to align the whiskers. Self-reinforced microstructure composed of well-aligned large elongated grains in smaller matrix grains was developed by the grain growth of seeded whiskers during gas-pressure sintering at 2000 degrees C in 30 MPa N-2 for 4h and heat treatment at 2200 degrees C in 30 MPa N-2 for 4h. Room-temperature thermal conductivity was anisotropic; 140 W.m(-1).K-1 for parallel to the grain alignment, and 84 W.m(-1).K-1 for perpendicular to the alignment.
引用
收藏
页码:631 / 633
页数:3
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