The effect of injection damage on a silicon bipolar low-noise amplifier

被引：12

作者：

Chai, Changchun ^{[1
]}

Yang, Yintang ^{[1
]}

Zhang, Bing ^{[1
]}

Leng, Peng ^{[1
]}

Yang, Yang ^{[1
]}

Rao, Wei ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 03期

基金：

中国国家自然科学基金;

关键词：

SEMICONDUCTOR-DEVICES; INTEGRATED-CIRCUITS; 1/F NOISE; METALLIZATION; INTERFERENCE;

D O I：

10.1088/0268-1242/24/3/035003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study on the energy injection-induced damage, by a pulse-modulated RF signal source, to a silicon bipolar low-noise amplifier (LNA) is described in this paper based on the analysis of pre- and post-injection data of the noise figure and the gain. Experimental results show that both the noise and the gain characteristics of the LNA are sensitive to energy injection. Sample dissection analysis and simulation results also indicate that energy injection damages the base electrode, and thus causes the base resistor r(bb') to increase, and, as a result, leads to an increase of the LNA noise. However, the gain of most LNA samples increases with the injection energy level following the time-based drift failure model of the bipolar current gain hFE. It is found that using the gain characteristics difference prior to and after the injection as the sole parameter to evaluate the damage is insufficient due to the complexity of the effect of energy injection- induced damage.

引用

页数：9

共 19 条

[1]

BERNARD S, 1969, P IEEE, V57, P1594

[2] ANALYSIS OF CMOS TRANSISTOR INSTABILITIES [J].