Monte Carlo investigation of the charge sharing effects in 3-D position sensitive CdZnTe gamma ray spectrometers

被引：17

作者：

Du, YF ^{[1
]}

He, Z ^{[1
]}

Li, W ^{[1
]}

Knoll, GF ^{[1
]}

Wehe, DK ^{[1
]}

机构：

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 04期

关键词：

D O I：

10.1109/23.790689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge sharing effects in a 3-D position sensitive CdZnTe detector have been investigated by Monte Carlo simulations and experimental measurements. The charge sharing is mainly caused by the range of electrons, x-ray emission following by photoelectric interactions, and the diffusion of charge carrier electrons during their drift towards the anodes. A simple model has been developed to include the diffusion effect in the Monte Carlo simulation. Good agreement has been achieved for various irradiation and bias conditions. Based on our model simulations, a I mm. optimal pixel size is recommended for future I cm thick CZT detectors for 662 keV gamma rays.

引用

页码：844 / 847

页数：4

共 8 条

[1] CHARGE-TRANSPORT IN ARRAYS OF SEMICONDUCTOR GAMMA-RAY DETECTORS
BARRETT, HH
ESKIN, JD
BARBER, HB
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (01) : 156 - 159
[2] Position-sensitive single carrier CdZnTe detectors
He, Z
Knoll, GF
Wehe, DK
Miyamoto, J
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 388 (1-2) : 180 - 185
[3] 1-D position sensitive single carrier semiconductor
He, Z
Knoll, GF
Wehe, DK
Rojeski, R
Mastrangelo, CH
Hammig, M
Barrett, C
Uritani, A
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2) : 228 - 231
[4] HE Z, 1997, P 1997 MRS M DEC 1 5
[5] HE Z, 1998, IN PRESS NUCL I METH
[6] UNIPOLAR CHARGE SENSING WITH COPLANAR ELECTRODES - APPLICATION TO SEMICONDUCTOR-DETECTORS
LUKE, PN
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (04) : 207 - 213
[7] PRETTYMAN T, 1997, 1997 SCI S ROOM TEMP
[8] SCHLESINGER TE, 1995, SEMICONDUCTORS ROOM, P345

← 1 →