Highly efficient scalable monolithic semiconductor terahertz pulse source

被引：92

作者：

Fulop, J. A. ^{[1
,2
,3
,4
]}

Polonyi, Gy. ^{[1
,2
,3
]}

Monoszlai, B. ^{[2
,3
,4
]}

Andriukaitis, G. ^{[5
]}

Balciunas, T. ^{[5
]}

Pugzlys, A. ^{[5
,6
]}

Arthur, G. ^{[7
]}

Baltuska, A. ^{[5
,6
]}

Hebling, J. ^{[1
,2
,3
]}

机构：

[1] MTA PTE High Field Terahertz Res Grp, Pecs, Hungary

[2] Univ Pecs, Inst Phys, Pecs, Hungary

[3] Univ Pecs, Szentagothai Res Ctr, Pecs, Hungary

[4] ELI Hu Nkft, ELI ALPS, Szeged, Hungary

[5] Vienna Univ Technol, Photon Inst, Vienna, Austria

[6] Ctr Phys Sci & Technol, Vilnius, Lithuania

[7] Scitech Precis Ltd, Oxford, England

来源：

OPTICA | 2016年 / 3卷 / 10期

基金：

匈牙利科学研究基金会; 奥地利科学基金会;

关键词：

OPTICAL RECTIFICATION; HIGH-ENERGY; THZ PULSES; GENERATION; LASER; DESIGN; LIGHT;

D O I：

10.1364/OPTICA.3.001075

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Intense pulses at low terahertz (THz) frequencies of 0.1-2 THz are an enabling tool for constructing compact particle accelerators and for strong-field control of matter. Optical rectification in lithium niobate provided sub-mJ THz pulse energies, but it is challenging to increase it further. Semiconductor sources suffered from low efficiency. Here, a semiconductor (ZnTe) THz source is demonstrated, collinearly pumped at an infrared wavelength beyond the three-photon absorption edge and utilizing a contact grating for tilting the pump-pulse front. Suppression of free-carrier absorption at THz frequencies in this way resulted in 0.3% THz generation efficiency, two orders of magnitude higher than reported previously from ZnTe. Scaling the THz energy to the mJ level is possible simply by increasing the pumped area. This unique THz source with excellent focusability, pumped by novel, efficient infrared sources, opens up new perspectives for THz high-field applications. (C) 2016 Optical Society of America

引用

页码：1075 / 1078

页数：4

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