Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

被引：23

作者：

Tangi, Malleswararao ^{[1
]}

Kuyyalil, Jithesh ^{[1
]}

Shivaprasad, S. M. ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 15期

关键词：

CHARGE ACCUMULATION; TRANSPORT; MOBILITY; SPECTRA; GAP; ALN;

D O I：

10.1063/1.4824823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the surface charge accumulation on InN thin films that strongly effects mobility of charge carriers. The films are formed by MBE in the temperature range (400-470 degrees C) yielding films with different morphology, crystallinity, and optical properties. The band-gap values determined by optical absorption and PL studies are found to depend on the Hall carrier concentration as per the Moss-Burstein relation. The magnitude of the near surface band bending is measured on InN thin films by knowing the surface and bulk Fermi level position with respect to the valence band maximum using X-ray photoelectron spectroscopy and optical absorption measurements, respectively. The studies show that the surface charge occurs due to the In adlayer on the film causing band-bending is up to 1 eV for low band gap single crystalline films and nearly a flat band for the highly degenerate polycrystalline films. The absence of the band bending is seen to occur when the bulk carrier concentration related to the crystalline quality of the InN films, tends to equate with the surface charge density. (C) 2013 AIP Publishing LLC.

引用

页数：6

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