Lanthanum modified lead zirconate titanate thin films by sol-gel and plasma annealing for integrated passive nanophotonic devices

被引:3
|
作者
Xu, Jianmei [1 ]
Huang, Can [1 ]
Dong, Jin [1 ]
Zhou, Wei [1 ]
Yang, Zhihong [1 ]
Zhao, Ling [1 ]
Wang, Qing [2 ]
Yang, Rui [3 ]
机构
[1] China Univ Geosci, Fac Mat Sci & Chem, Wuhan 430047, Hubei, Peoples R China
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Accelink Technol Co LTD, Wuhan 430205, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
FERROELECTRIC PROPERTIES; PLZT; TRANSMITTANCE; TEMPERATURE; FABRICATION;
D O I
10.1364/OME.9.002279
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lanthanum modified lead zirconate titanate (PLZT) thin films were prepared by sol-gel and the plasma annealing process. The PLZT thin films are pure perovskite phase and highly crystalline. The polarization-electric loops confirmed quadratic PLZT thin films. The optical properties were determined by a spectroscopic ellipsometry analyzer, showing an absorption coefficient of near zero and an energy gap of around 3.6 eV. The insertion losses of the optical devices based on PLZT films are less than 5 dB. These films have the potential to be applied in the field of integrated nanophotonic devices. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:2279 / 2290
页数:12
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