In situ imaging of microstructure formation in electronic interconnections

被引:44
作者
Salleh, M. A. A. Mohd [1 ,2 ,3 ]
Gourlay, C. M. [3 ]
Xian, J. W. [3 ]
Belyakov, S. A. [3 ]
Yasuda, H. [4 ]
McDonald, S. D. [1 ]
Nogita, K. [1 ]
机构
[1] Univ Queensland, Sch Mech & Min Engn, Nihon Super Ctr Manufacture Elect Mat NS CMEM, St Lucia, Qld 4072, Australia
[2] Univ Malaysia Perlis, Sch Mat Engn, Ctr Excellence Geopolymer & Green Technol, Arau 02600, Perlis, Malaysia
[3] Imperial Coll, Dept Mat, London SW7 2AZ, England
[4] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
基金
英国工程与自然科学研究理事会; 澳大利亚研究理事会;
关键词
SN-AG-CU; GROWTH-BEHAVIOR; UNIDIRECTIONAL SOLIDIFICATION; INTERFACIAL REACTION; CU6SN5; SOLDERS; ALLOYS; AG3SN;
D O I
10.1038/srep40010
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development of microstructure during melting, reactive wetting and solidification of solder pastes on Cu-plated printed circuit boards has been studied by synchrotron radiography. Using Sn-3.0Ag0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show that the interfacial Cu6Sn5 layer is present within 0.05 s of wetting, and explore the kinetics of flux void formation at the interface between the liquid and the Cu6Sn5 layer. Quantification of the nucleation locations and anisotropic growth kinetics of primary Cu6Sn5 crystals reveals a competition between the nucleation of Cu6Sn5 in the liquid versus growth of Cu6Sn5 from the existing Cu6Sn5 layer. Direct imaging confirms that the beta-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/Cu joints.
引用
收藏
页数:11
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