Effect of Impurities on the Raman Scattering of 6H-SiC Crystals

被引：23

作者：

Lin, Shenghuang ^{[1
]}

Chen, Zhiming ^{[1
]}

Li, Lianbi ^{[2
]}

Yang, Chen ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China

[2] Xian Polytech Univ, Sch Sci, Xian 710043, Peoples R China

来源：

MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS | 2012年 / 15卷 / 06期

关键词：

Raman scattering; 6H-SiC; impurity; SILICON CARBIDE; SPECTROSCOPY; MICROPIPES; SPECTRA;

D O I：

10.1590/S1516-14392012005000108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

引用

页码：833 / 836

页数：4

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