Active matrix electrophoretic displays on temporary bonded stainless steel substrates with 180°C a-Si:H TFTs

被引：2
|
作者：
O'Rourke, Shawn M. [1 ]
Venugopal, Sameer M. [1 ]
Raupp, Gregory B. [1 ]
Allee, David R. [1 ]
Ageno, Scott [1 ]
Bawolek, Edward J. [1 ]
Loy, Douglas E. [1 ]
Kaminski, Jann P. [1 ]
Moyer, Curt [1 ]
O'Brien, Barry [1 ]
Long, Ke [1 ]
Marrs, Michael [1 ]
Bottesch, Dirk [1 ]
Dailey, Jeff [1 ]
Trujillo, Jovan [1 ]
Cordova, Rita [1 ]
Richards, Mark [1 ]
Toy, Daniel [1 ]
Colaneri, Nicholas [1 ]
机构：
[1] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA
来源：
2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷
关键词：
D O I：
10.1889/1.3069688
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A low temperature, 180 degrees C, amorphous Si (a-Si:H) process on bonded stainless steel substrates is discussed and a 3.8-inch QVGA active matrix (AM) electrophoretic display as well as a 64x64 electrophoretic display with integrated column drivers are demonstrated. The n-channel thin-film transistors (TFTs) exhibited saturation mobilities of 0.7 cm(2)/V-sec, median drive currents of 26.2 mu A and low defectivity.
引用
收藏
页码：422 / 424
页数：3
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