Images of scanning tunneling microscopy on the Si(001)-p(2 x 2) reconstructed surface

被引：17

作者：

Fujimoto, Y ^{[1
]}

Okada, H ^{[1
]}

Endo, K ^{[1
]}

Ono, T ^{[1
]}

Tsukamoto, S ^{[1
]}

Hirose, K ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan

来源：

MATERIALS TRANSACTIONS | 2001年 / 42卷 / 11期

关键词：

scanning tunneling microscopy; first-principles method; Si(001)-p(2 x 2) surface;

D O I：

10.2320/matertrans.42.2247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated in detail the dependence of scanning tunneling microscopy (STM) images of the Si(001)-p(2 x 2) surface on bias and tip-sample distance, based on first-principles molecular-dynamics simulations. STM images on the terrace of the Si(001)-p(2 x 2) surface are found to be similar to those at the S-A-step edges of the Si(001) surface. The present theoretical calculations predict that the STM images strongly depend on the sample bias and tip-sample separations, and that the pi and pi* surface states contribute to the changes of the STM corrugation images.

引用

页码：2247 / 2252

页数：6

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