Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

被引:0
作者
Imenkov, A. N. [1 ]
Sherstnev, V. V.
Monakhov, A. M.
Tarasov, D. S.
Il'inskaya, N. D.
Serebrennikova, O. Yu.
Baranov, A. N.
Yakovlev, Yu. P.
机构
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
Spontaneous Emission; GaSb; Quantum Well; Technical Physic Letter; Directivity Pattern;
D O I
10.1134/S106378501202006X
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization of lasing and spontaneous emission from half-disk- and disk-shaped quantum-confinement lasers operating on whispering-gallery modes with wavelengths within 2.18-2.28 mu m has been studied. It is established that electric vector E of output radiation is oriented predominantly in the p-n junction plane, which is explained by the fact that radiation is generated due to electron-heavy hole transitions. Modulation of the polarized spontaneous radiation spectra has been observed.
引用
收藏
页码:103 / 105
页数:3
相关论文
共 10 条
  • [1] Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al0.35Ga0.65As:Be quantum wells
    Averkiev, N. S.
    Ivanov, Yu. L.
    Krasivichev, A. A.
    Petrov, P. V.
    Sablina, N. I.
    Sedov, V. E.
    [J]. SEMICONDUCTORS, 2008, 42 (03) : 316 - 320
  • [2] Physical working principles of semiconductor disk lasers
    Averkiev, N. S.
    Sherstnev, V. V.
    Monakhov, A. M.
    Grebenshikova, E. A.
    Kislyakova, A. Yu.
    Yakovlev, Yu. P.
    Krier, A.
    Wright, D. A.
    [J]. LOW TEMPERATURE PHYSICS, 2007, 33 (2-3) : 283 - 290
  • [3] Averkiev N. S., 1987, Soviet Technical Physics Letters, V13, P135
  • [4] Casey Jr. N.C., 1978, HETEROSTRUCTURE LA A
  • [5] Casey Jr N.C., 1978, HETEROSTRUCTURE LA B
  • [6] ANOMALOUS POLARIZATION CHARACTERISTICS OF 1.3-MU-M INGAASP BURIED HETEROSTRUCTURE LASERS
    CRAFT, DC
    DUTTA, NK
    WAGNER, WR
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 823 - 825
  • [7] Experimental observation of whispering gallery modes in sector disk lasers
    Monakhov, A. M.
    Sherstnev, V. V.
    Astakhova, A. P.
    Yakovlev, Yu. P.
    Boissier, G.
    Teissier, R.
    Baranov, A. N.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (05)
  • [8] ROOM-TEMPERATURE OPERATION OF AL0.17GA0.83SB/GASB MULTI-QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    OHMORI, Y
    TARUCHA, S
    HORIKOSHI, Y
    OKAMOTO, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L94 - L96
  • [9] Semiconductor WGM lasers for the mid-IR spectral range
    Sherstnev, VV
    Monakhov, AM
    Astakhova, AP
    Kislyakova, AY
    Yakovlev, YP
    Averkiev, NS
    Krier, A
    Hill, G
    [J]. SEMICONDUCTORS, 2005, 39 (09) : 1087 - 1092
  • [10] High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3μm
    Yarekha, DA
    Glastre, G
    Perona, A
    Rouillard, Y
    Genty, F
    Skouri, EM
    Boissier, G
    Grech, P
    Joullié, A
    Alibert, C
    Baranov, AN
    [J]. ELECTRONICS LETTERS, 2000, 36 (06) : 537 - 539