Polarization properties of praseodymium-modified SrBi2Ta2O9 ceramics and thin films prepared by sol-gel method

被引：18
作者：
Kitamura, A
Noguchi, Y
Miyayama, M
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Corp, JST, PRESTO, Kawaguchi, Saitama 332012, Japan
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 11期
关键词：
ferroelectrics; perovskites; defects; SrBi2Ta2O9;
D O I：
10.1016/j.matlet.2003.11.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pr0.14Sr0.8Bi2.1Ta2O9 (Pr-SBT) thin films were prepared by sol-gel method, and the polarization properties were measured and compared with that of Pr-SBT ceramics. The Rietveld analysis of powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) revealed that praseodymium ions are substituted at the Sr site as Pr3+ with Sr vacancies. While Pr-SBT ceramics showed a remanent polarization (2P(r)) of 21 muC/cm(2), the 2P(r) of Pr-SBT thin films with the thickness of 280 nm was 15 muC/cm(2). The value of coercive voltage (2V(c)) of the films was 1.4 V (coercive field, 2E(c) was 52 kV/cm), which was lower that that of SBT thin films. It is shown that Pr-SBT is a promising candidate material for low-voltage operating ferroelectric memories. (C) 2004 Elsevier B.V. All rights reserved.
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收藏
页码：1815 / 1818
页数：4
相关论文
共 12 条
[1]   PREPARATION OF BI-BASED FERROELECTRIC THIN-FILMS BY SOL-GEL METHOD [J].
ATSUKI, T ;
SOYAMA, N ;
YONEZAWA, T ;
OGI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5096-5099
[2]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[3]   Preparation and dielectric properties of SrBi2Ta2O9 thin films by sol-gel method [J].
Hayashi, T ;
Hara, T ;
Takahashi, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5900-5903
[4]   Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures [J].
Hirai, T ;
Fujisaki, Y ;
Nagashima, K ;
Koike, H ;
Tarui, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5908-5911
[5]   Factors controlling the a-axis orientation of strontium bismuth tantalate thin films fabricated by chemical solution deposition [J].
Iijima, R .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2240-2242
[6]   A Rietveld-analysis program RIETAN-98 and its applications to zeolites [J].
Izumi, F ;
Ikeda, T .
EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 2000, 321-3 :198-203
[7]   A fatigue-tolerant metal-ferroelectric-oxide-semiconductor structure with large memory window using Sr-deficient and bi-excess Sr0.7Bi2+yTa2O9 ferroelectric films prepared on SiO2/Si at low temperature by pulsed laser deposition [J].
Noda, M ;
Matsumuro, Y ;
Sugiyama, H ;
Okuyama, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2275-2280
[8]   Analysis of the dependence of ferroelectric properties of strontium bismuth tantalate (SET) thin films on the composition and process temperature [J].
Noguchi, T ;
Hase, T ;
Miyasaka, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :4900-4904
[9]   Defect engineering for control of polarization properties in SrBi2Ta2O9 [J].
Noguchi, Y ;
Miyayama, M ;
Oikawa, K ;
Kamiyama, T ;
Osada, M ;
Kakihana, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :7062-7075
[10]   Direct evidence of A-site-deficient strontium bismuth tantalate and its enhanced ferroelectric properties -: art. no. 214102 [J].
Noguchi, Y ;
Miyayama, M ;
Kudo, T .
PHYSICAL REVIEW B, 2001, 63 (21)
12