Pathways toward higher performance CdS/CdTe devices: Te exposure of CdTe surface before ZnTe:Cu/Ti contacting

被引：13

作者：

Gessert, T. A. ^{[1
]}

Burst, J. M. ^{[1
]}

Wei, S. -H. ^{[1
]}

Ma, J. ^{[1
]}

Kuciauskas, D. ^{[1
]}

Rance, W. L. ^{[1
]}

Barnes, T. M. ^{[1
]}

Duenow, J. N. ^{[1
]}

Reese, M. O. ^{[1
]}

Li, J. V. ^{[1
]}

Young, M. R. ^{[1
]}

Dippo, P. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2013年 / 535卷

关键词：

CdTe; ZnTe; Contacts; Stoichiometry;

D O I：

10.1016/j.tsf.2012.11.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Many studies of thin-film CdS/CdTe photovoltaic devices have suggested that performance may be improved by reducing recombination due to Te-vacancy (V-Te), Te antisite (Te-Cd), or Te-interstitial (Te-i) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it may be also coupled to the formation of beneficial cadmium vacancy (V-Cd) defects. In this study, we expose the CdTe surface to Te vapor prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing V-Te without significantly reducing VCd. Initial results show that when this modified contact is used on a CdCl2-treated CdS/CdTe device, poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or CuxTe or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of V-Te (e.g., oxygen and chlorine additions), adding even a small amount of Te may produce detrimental defects. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：237 / 240

页数：4

共 8 条

[1] CdTe photoluminescence: Comparison of solar-cell material with surface-modified single crystals [J].