Spintronics

被引:53
作者
Grundler, D
机构
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Mikrostrukturforschungszentrum, D-20355 Hamburg, Germany
关键词
D O I
10.1088/2058-7058/15/4/38
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The use of spin degree of freedom in semiconductors to make new logic devices with enhanced functionality, higher speed and reduced power consumption was discussed. It was observed that for semiconductor spintronics to work, the electron must be polarized to put their spin points in same direction. The analysis showed that spin can be controlled at the nanometer level using nanomagnets which produces highly localized magnetic fields. The working of spintronics with the aid of a field effect transistor (FET) is also presented.
引用
收藏
页码:39 / 43
页数:5
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