Microstructure Effects in Hot-wire Deposited Undoped Microcrystalline Silicon Films

The microstructure of hot-wire microcrystalline silicon films prepared at a wide range of deposition conditions was characterized by both the microstructure parameter from infrared absorption data (analyzing the Si-H stretching modes) and the effusion spectra of (low dose) implanted He and Ne. Parameter ranges leading to the growth of a dense material are identified. A (relatively) high silane flow at rather high filament temperature is found to result in a dense material at high deposition rate. The microstructure data obtained by the two microstructure characterization methods are found to be largely correlated.