Large area single crystal (0001) oriented MoS2

被引：165

作者：

Laskar, Masihhur R. ^{[1
]}

Ma, Lu ^{[2
]}

Kannappan, Santhakumar ^{[3
]}

Park, Pil Sung ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Nath, Digbijoy N. ^{[1
]}

Lu, Wu ^{[1
]}

Wu, Yiying ^{[2
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Chem & Biochem, Columbus, OH 43210 USA

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 25期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; INTEGRATED-CIRCUITS; ATOMIC LAYERS; PHOTOLUMINESCENCE; EXFOLIATION; GROWTH;

D O I：

10.1063/1.4811410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, the potential for exciting physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area single crystal Molybdenum Disulfide (MoS2) thin films. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) oriented sapphire yielded highly oriented single crystal MoS2 films. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures. (C) 2013 AIP Publishing LLC.

引用

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