Growth, structural and optical properties of AlGaN nanowires in the whole composition range

被引：71

作者：

Pierret, A. ^{[1
,2
,3
]}

Bougerol, C. ^{[1
,4
]}

Murcia-Mascaros, S. ^{[5
]}

Cros, A. ^{[5
]}

Renevier, H. ^{[6
]}

Gayral, B. ^{[1
,2
]}

Daudin, B. ^{[1
,2
]}

机构：

[1] Univ Grenoble 1, CEA CNRS Grp Nanophys & Semicond, Inst Neel, CNRS, F-38054 Grenoble, France

[2] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France

[3] ONERA CNRS, Lab Etud Microstruct, F-92322 Chatillon, France

[4] CEA Grenoble, F-38054 Grenoble, France

[5] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain

[6] INP CNRS, Lab Mat & Genie Phys, UMR 5628, Minatec, F-38016 Grenoble, France

来源：

NANOTECHNOLOGY | 2013年 / 24卷 / 11期

关键词：

MOLECULAR-BEAM EPITAXY; MASS-SPECTROMETRY; GAN; NUCLEATION; FILMS; ALN; SEMICONDUCTORS; SAPPHIRE(0001); NANOCOLUMNS; KINETICS;

D O I：

10.1088/0957-4484/24/11/115704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN nanowire section on top of the GaN nanowire base which is used as a substrate.

引用

页数：9

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