Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF6/O2/SiF4

被引：28

作者：

Zhang, Liping ^{[1
,2
]}

Ljazouli, Rami ^{[3
]}

Lefaucheux, Philippe ^{[3
]}

Tillocher, Thomas ^{[3
]}

Dussart, Remi ^{[3
]}

Mankelevich, Yuri A. ^{[4
]}

de Marneffe, Jean-Francois ^{[1
]}

de Gendt, Stefan ^{[1
,2
]}

Baklanov, Mikhail R. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] KULeuven, Dept Chem, B-3001 Louvain, Belgium

[3] Univ Orleans, CNRS, GREMI, F-45067 Orleans 2, France

[4] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 06期

关键词：

LOW DIELECTRIC-CONSTANT; PASSIVATION LAYER; PLASMA DAMAGE; ULTRALOW-K; FILMS; POROSITY; RECOMBINATION; MODEL;

D O I：

10.1149/2.001306jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature plasma etching of porous organosilicate low-k films is studied, in an ICP chamber with cryo-cooled substrate holder, using Fluorine-based plasma discharges. It is demonstrated that plasma-induced damage is significantly reduced when the base temperature is below a threshold T-c that depends on pore size of low-k materials. For T < T-c, almost no carbon depletion is observed and the k-value degradation is negligible. It is shown that protection occurs mainly through the condensation of the etch by-products and their ability to seal the open pores against radical diffusion. By addition of SiF4 and O-2 into the gas discharge, plasma-induced damage is further reduced, as a result of SiOxFy deposition. Vertical trench profiles are obtained in patterned structures, using an inorganic hard mask. The damage reduction mechanism is discussed and a protection model is proposed. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：N131 / N139

页数：9

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