Microscopic emission properties of nonpolar a-plane GaN grown by HVPE

被引：6
作者：
Paskova, T. [1 ]
Kroeger, R. [1 ]
Paskov, P. P. [1 ]
Figge, S. [1 ]
Hommel, D. [1 ]
Monemar, B. [1 ]
Haskell, B. [1 ]
Fini, P. [1 ]
Speck, J. S. [1 ]
Nakamura, S. [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
来源：
Gallium Nitride Materials and Devices | 2006年 / 6121卷
关键词：
a-plane GaN; emission properties; stacking faults; dislocations; pits; cracks; cathodoluminescence; TEM;
D O I：
10.1117/12.645672
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the emission distributions in nonpolar a-plane GaN thick films grown by HVPE using different nucleation schemes. The emission spectra show in addition to the near band edge emission band, also defect related bands due to different structural defects being enhanced/reduced to different extent in samples grown on different templates. Spatially resolved cathodoluminescence imaging reveals the in-plane distributions of the respective emission bands, which allows us to correlate the emissions with particular stacking fault structural defects independently revealed by plan-view transmission electron microscopy. In addition, emission distributions were visualized in vicinity of large-scale defects like surface triangle pits, depressions and cracks attributed to prevailing defect formation and/or impurity incorporation.
引用
收藏
页码：12106 / 12106
页数：7
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