High-Performance Si Optical Modulator with Strained p-SiGe Layer and its Application to 25 Gbps Optical Transceiver

被引：0

作者：

Fujikata, Junichi ^{[1
]}

Kinoshita, Keizo ^{[1
]}

Han, Jaehoon ^{[2
]}

Horikawa, Tsuyoshi ^{[1
]}

Takahashi, Shigeki ^{[1
]}

Yashiki, Kenichiro ^{[1
]}

Kurihara, Mitsuru ^{[1
]}

Hagihara, Yasuhiko ^{[1
]}

Takenaka, Mitsuru ^{[2
]}

Nakamura, Takahiro ^{[1
]}

Kurata, Kazuhiko ^{[1
]}

Mogami, Tohru ^{[1
]}

机构：

[1] PETRA, Tsukuba, Ibaraki 3058569, Japan

[2] Univ Tokyo, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed a high speed and high efficiency of depletion type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer which was stacked on the lateral pn junction type Si-MOD. We designed the optimum Si-MOD structure and demonstrated a high modulation efficiency of 1.0 Vcm, which is about 50% more efficient than that of Si-MOD with a lateral pn junction. We also demonstrated a high speed operation of 25 Gbps for the Si-MOD at around 1.3 mu m wavelength with CMOS-driver and high-performance Ge photodetector (Ge-PD) integration.

引用

页码：25 / 26

页数：2