Interfacial dipole in organic p-n junction to realize write-once-read-many-times memory

被引：15

作者：

Wang, Lidan ^{[1
]}

Su, Zisheng ^{[2
]}

Wang, Cheng ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, Changchun 130022, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Organic memory; WORM; Interfacial dipole; p-n Junction; Charge carrier transport; FIELD-EFFECT TRANSISTORS; ENERGY-LEVEL ALIGNMENT; COPPER PHTHALOCYANINE; THIN-FILM; ELECTRONIC-STRUCTURE; BISTABLE DEVICES; POLYMER; STABILITIES; MECHANISMS; MOBILITY;

D O I：

10.1016/j.orgel.2013.02.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new approach is exploited to realize nonvolatile organic write-once-read-many-times (WORM) memory based on copper phthalocyanine (CuPc)/hexadecafluoro-copper-phthalocyanine (F16CuPc) p-n junction. The as-fabricated device is found to be at its ON state and can be programmed irreversibly to the OFF state by applying a negative bias. The WORM device exhibits a high ON/OFF current ratio of up to 2.6 x 10(4). An interfacial dipole layer is testified to be formed and destructed at the p-n junction interface for the ON and OFF states, respectively. The ON state at positive voltage region is attributed to the efficient hole and electron injection from the respective electrodes and then recombination at the CuPc/F16CuPc interface, and the transition of the device to the OFF state results from the destruction of the interfacial dipole layer and formation of an insulating layer which restricts charge carrier recombination at the interface. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1163 / 1169

页数：7

共 51 条

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