Solubility of Si3N4 in liquid SiO2

被引:0
|
作者
Gu, H [1 ]
Cannon, RM
Seifert, HJ
Hoffmann, MJ
Tanaka, I
机构
[1] Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Max Planck Inst Met Res, Pulvermet Lab, D-70569 Stuttgart, Germany
[4] Univ Karlsruhe, Inst Keram Maschinenbau, D-76131 Karlsruhe, Germany
[5] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The nitrogen solubility in the SiO(2)-rich liquid in the metastable binary SiO(2)-Si(3)N(4) system has been determined by analytical TEM to be 1%-4% of N/(O + N) at 1973-2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is Incorporated into the silicate network rather than being present as molecular N(2). A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si(3)N(4) and to adjust the computed phase diagram. The solubility of Si(3)N(4) in fused SiO(2) is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si(3)N(4) without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si(3)N(4)-SiO(2) interface that leads to amorphous regions of higher N content.
引用
收藏
页码:25 / 32
页数:8
相关论文
共 50 条
  • [1] Solubility of Si3N4 in liquid SiO2
    Gu, H., 1600, American Ceramic Society (85):
  • [2] LVV SPECTRA OF SI,SIO2 AND SI3N4
    JOHANNESSEN, JS
    SPICER, WE
    STRAUSSER, YE
    PHYSICA SCRIPTA, 1979, 19 (04): : 355 - 359
  • [4] SIO2 DOPED SI3N4 CERAMICS
    TAKAHASHI, T
    ISOMURA, M
    ENDOH, Y
    FURUSE, Y
    SILICON NITRIDE 93, 1994, 89-9 : 225 - 228
  • [5] DEFECT CONTROL IN SI3N4/SI3N4/SIO2 STRUCTURES FOR ISOLATION PROCESSES
    CLAEYS, C
    LEUVEN, KV
    VANHELLEMONT, J
    DECLERCK, G
    VANLANDUYT, J
    VANOVERSTRAETEN, R
    AMELINCKX, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C84 - C84
  • [6] WETTABILITY OF SIC, SI3N4 AND SIO2 WITH LIQUID CU-SI ALLOY
    NOGI, K
    TETSU TO HAGANE-JOURNAL OF THE IRON AND STEEL INSTITUTE OF JAPAN, 1986, 72 (05): : S715 - S715
  • [7] Franz Dispersion Relation for Tunneling Simulations in Polycrystalline Silicon/SiO2/Si3N4/SiO2/Si and TaN/Al2O3/Si3N4/SiO2/Si Structures
    Vexler, Mikhail I.
    Kuligk, Angelika
    Meinerzhagen, Bernd
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (05) : 05DE011 - 05DE015
  • [8] Track formation in SiO2/Si and Si3N4/Si structures
    Alzhanova, A. Ye.
    Dauletbekova, A. K.
    BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2015, 2 (78): : 4 - 8
  • [9] LOW-TEMPERATURE DEPOSITION OF SiO2, Si3N4 OR SiO2-Si3N4.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (09):
  • [10] THERMOCHEMICAL CALCULATIONS ON THE LPCVD OF SI3N4 AND SIO2
    SPEAR, KE
    WANG, MS
    SOLID STATE TECHNOLOGY, 1980, 23 (07) : 63 - 68