TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

被引：3
|
作者：
Wang, Ruoyu [1 ]
Guo, Jingwei [1 ]
Liu, Chang [1 ]
Wu, Hao [1 ,2 ]
Huang, Zhiyong [1 ]
Hu, Shengdong [1 ]
机构：
[1] Chongqing Univ, Sch Microelect & Commun Engn, Chongqing Engn Lab High Performance Integrated Ci, Chongqing 400044, Peoples R China
[2] Natl Lab Sci & Technol Analog Integrated Circuits, Chongqing 401332, Peoples R China
来源：
MICROMACHINES | 2022年 / 13卷 / 10期
基金：
中国国家自然科学基金;
关键词：
silicon carbide; heterojunction diode; trench MOSFET; TEMPERATURE; SEMICONDUCTOR; MOBILITY; VOLTAGE; GATE;
D O I：
10.3390/mi13101741
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.
引用
收藏
页数：10
相关论文
共 50 条
  • [41] Effect of P plus shielding region on single event burnout of 4H-SiC trench gate MOSFET
    Liu Yan-juan
    Wang Ying
    Yu Cheng-hao
    Luo Xin
    Cao Fei
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 122 : 165 - 170
  • [42] A complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale
    Yadav, M. K.
    Pradhan, K. P.
    Sahu, P. K.
    ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 2016, 7 (02)
  • [43] Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current
    Song QingWen
    Yuan Hao
    Han Chao
    Zhang YuMing
    Tang XiaoYan
    Zhang YiMeng
    Guo Hui
    Zhang YiMen
    Jia RenXu
    Wang YueHu
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2015, 58 (08) : 1369 - 1374
  • [44] Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs
    Kutsuki, Katsuhiro
    Watanabe, Yukihiko
    Yamashita, Yusuke
    Soejima, Narumasa
    Kataoka, Keita
    Onishi, Toru
    Yamamoto, Kensaku
    Fujiwara, Hirokazu
    SOLID-STATE ELECTRONICS, 2019, 157 : 12 - 19
  • [45] Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)
    Yun, Nick
    Lynch, Justin
    Morgan, Adam J.
    Xing, Dang
    Jin, Michael
    Qianb, Jiashu
    Kang, Minseok
    Amarasinghe, Voshadhi
    Ransom, John
    Veliadis, Victor
    Agarwal, Anant
    Sung, Woongje
    2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 249 - 252
  • [46] Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode
    Zheng, Ya Liang
    Tang, Wing Man
    Chau, Tony
    Sin, Johnny Kin On
    Lai, Peter T.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 951 - 957
  • [47] High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode
    Li, Mao-Bin
    Cao, Fei
    Hu, Hai-Fan
    Li, Xing-Ji
    Yang, Jian-Qun
    Wang, Ying
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 (09): : 591 - 598
  • [48] A New Junction Barrier Schottky Diode Using a Novel Lateral Architecture on a 4H-SiC Substrate
    Lynch, Justin
    Yun, Nick
    Sung, Woongje
    2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 125 - 129
  • [49] Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
    Yang, Fei
    Tian, Lixin
    Shen, Zhanwei
    Yan, Guoguo
    Liu, Xingfang
    Zhao, Wanshun
    Wang, Lei
    Sun, Guosheng
    Wui, Junmin
    Zhang, Feng
    Zeng, Yiping
    2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 74 - 78
  • [50] Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current
    Zhang, Long
    Ma, Jie
    Cui, Yongjiu
    Cui, Wangming
    Yuan, Shuai
    Zhu, Jing
    He, Nailong
    Zhang, Sen
    Sun, Weifeng
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (07) : 1037 - 1040
12345