TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

被引：3

作者：

Wang, Ruoyu ^{[1
]}

Guo, Jingwei ^{[1
]}

Liu, Chang ^{[1
]}

Wu, Hao ^{[1
,2
]}

Huang, Zhiyong ^{[1
]}

Hu, Shengdong ^{[1
]}

机构：

[1] Chongqing Univ, Sch Microelect & Commun Engn, Chongqing Engn Lab High Performance Integrated Ci, Chongqing 400044, Peoples R China

[2] Natl Lab Sci & Technol Analog Integrated Circuits, Chongqing 401332, Peoples R China

来源：

MICROMACHINES | 2022年 / 13卷 / 10期

基金：

中国国家自然科学基金;

关键词：

silicon carbide; heterojunction diode; trench MOSFET; TEMPERATURE; SEMICONDUCTOR; MOBILITY; VOLTAGE; GATE;

D O I：

10.3390/mi13101741

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.

引用

页数：10

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