TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

被引：3
|
作者：
Wang, Ruoyu [1 ]
Guo, Jingwei [1 ]
Liu, Chang [1 ]
Wu, Hao [1 ,2 ]
Huang, Zhiyong [1 ]
Hu, Shengdong [1 ]
机构：
[1] Chongqing Univ, Sch Microelect & Commun Engn, Chongqing Engn Lab High Performance Integrated Ci, Chongqing 400044, Peoples R China
[2] Natl Lab Sci & Technol Analog Integrated Circuits, Chongqing 401332, Peoples R China
来源：
MICROMACHINES | 2022年 / 13卷 / 10期
基金：
中国国家自然科学基金;
关键词：
silicon carbide; heterojunction diode; trench MOSFET; TEMPERATURE; SEMICONDUCTOR; MOBILITY; VOLTAGE; GATE;
D O I：
10.3390/mi13101741
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.
引用
收藏
页数：10
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