Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures

被引：4

作者：

Usman, Muhammad ^{[1
]}

Alzoubi, Tariq ^{[1
]}

Benyoucef, Mohamed ^{[1
]}

Reithmaier, Johann Peter ^{[1
]}

机构：

[1] Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt, D-34132 Kassel, Germany

来源：

MICROELECTRONIC ENGINEERING | 2012年 / 97卷

关键词：

Nanostructuring of silicon; Electron beam lithography; ICP dry etching; MBE growth; InGaAs quantum dots; CONTROLLED QUANTUM DOTS;

D O I：

10.1016/j.mee.2012.02.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100 nm holes with controlled size and shape. An efficient in situ cleaning sequence based on atomic hydrogen cleaning at 500 degrees C combined with thermal oxide desorption at 750 degrees C confirmed by reflection high energy electron diffraction (RHEED) pattern of two dimensional clean surface prior to the MBE growth has been established. The MBE growth of GaAs/In0.15Ga0.85As/GaAs system on patterned Si surface has shown highly selective formation of localized dome like nanostructures in patterned holes with 1 mu m period. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：59 / 63

页数：5

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