High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

被引：32

作者：

Tessarek, C. ^{[1
,2
]}

Sarau, G. ^{[1
]}

Kiometzis, M. ^{[1
]}

Christiansen, S. ^{[1
,3
]}

机构：

[1] Max Planck Inst Sci Light, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Opt Informat & Photon, D-91058 Erlangen, Germany

[3] Inst Photon Technol, D-07745 Jena, Germany

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 03期

关键词：

OPTICAL-PROPERTIES; MICROCAVITIES; MICRODISKS; LASERS; LAYERS;

D O I：

10.1364/OE.21.002733

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Self-assembled GaN rods were grown on sapphire by metalorganic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo-and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods. (C) 2012 Optical Society of America

引用

页码：2733 / 2740

页数：8

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