Single-photon-emitting diode at liquid nitrogen temperature

被引：21

作者：

Dou, X. M. ^{[1
]}

Chang, X. Y. ^{[1
]}

Sun, B. Q. ^{[1
]}

Xiong, Y. H. ^{[1
]}

Niu, Z. C. ^{[1
]}

Huang, S. S. ^{[1
]}

Ni, H. Q. ^{[1
]}

Du, Y. ^{[1
]}

Xia, J. B. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2980517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the study of a single-photon-emitting diode at 77 K. The device is composed of InAs/GaAs quantum dots embedded in the i-region of a p-i-n diode structure. The high signal to noise ratio of the electroluminescence, as well as the small second order correlation function at zero-delay g((2))(0), implies that the device has a low multiphoton emission probability. By comparing the device performances under different excitation conditions, we have, in detail, discussed the basic parameters, such as signal to noise ratio and g((2))(0), and provided some useful information for the future application. (c) 2008 American Institute of Physics.

引用

页数：3

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