Analytical model for metal-insulator-metal mesh waveguide architectures

被引:30
作者
Lin, Charles [1 ]
Swillam, Mohamed A. [2 ]
Helmy, Amr S. [1 ]
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Amer Univ Cairo, Sch Sci & Engn, Dept Phys, New Cairo 11835, Egypt
关键词
SILICON; CONFINEMENT; PLASMONICS; JUNCTIONS; COUPLERS;
D O I
10.1364/JOSAB.29.003157
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Metal-insulator-metal (MIM) waveguide mesh structures utilize X-junctions as power distribution elements to create interference and feedback effects, thereby providing rich device functionality. We present a generalized analytical model for MIM mesh structures by incorporating a modified characteristic impedance model for MIM junctions into the scattering matrix formalism. The modified impedance model accounts for metal absorption and provides accurate prediction of plasmonic field distribution at X-junctions in terms of both magnitude and phase. Closed-form expressions for 2 x 1 and 2 x 2 MIM mesh architectures as well as MIM stub structures are then obtained and are dependent only on waveguide geometry and junction configuration. The model does not require numerically extracted parameters, and results agree, within a few percent, with those obtained from finite-difference time-domain method for both two-dimensional and three-dimensional waveguide geometries. The capability of the model for efficient design and optimization of junction-based MIM devices is demonstrated through the development of various filter and resonant devices. (C) 2012 Optical Society of America
引用
收藏
页码:3157 / 3169
页数:13
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