Structural Patterns Arising during Synthetic Growth of Fullerene-Like Sulfocarbide

被引:39
作者
Goyenola, Cecilia [1 ]
Stafstrom, Sven [1 ]
Hultman, Lars [1 ]
Gueorguiev, Gueorgui K. [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
基金
瑞典研究理事会;
关键词
CARBIDE THIN-FILMS; 1ST-PRINCIPLES CALCULATIONS; CARBON NANOTUBES; GRAPHENE; PHOSPHORUS; NITRIDE; SULFUR; PRECURSORS; STABILITY; EVOLUTION;
D O I
10.1021/jp307347t
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Carbon-based fullerene-like (FL) solid compounds are a new class of materials with extraordinary mechanical properties, which can be tuned by the dopant choice and its concentration. In this work, FL sulfocarbide (CSx) was studied by DFT simulations during synthetic growth with CmSn (m, n <= 2). The energetic and structural effects of S atoms at C sites in a graphene-like network were addressed by geometry optimizations and cohesive energy calculations. Results showed that for S concentrations lower than 10 at. %, smoothly bent pure hexagonal networks predominate. For higher S concentrations, the higher defect concentration leads to stronger deformation of the graphene-like sheets. It was determined that FL-CSx is well-structured (not amorphous) for S contents between 10 and 20 at. %. In contrast to other FL materials, bond rotation mechanisms are not expected to play any significant role during FL-CSx formation, and cross-linking sites are less frequent and may be assimilated in the planar structure during growth. Both quasi-planar networks and cage-like conformations were found to form during the synthetic growth of CSx. The detailed analysis of how CSx structural patterns form during its synthetic growth provides a realistic picture for the deposition of this novel compound by magnetron sputtering.
引用
收藏
页码:21124 / 21131
页数:8
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