Dopants effect on the band structure of PbTe thermoelectric material

被引：75

作者：

Takagiwa, Y. ^{[1
,2
]}

Pei, Y. ^{[2
]}

Pomrehn, G. ^{[2
]}

Snyder, G. J. ^{[2
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[2] CALTECH, Dept Mat Sci, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 09期

关键词：

LEAD-TELLURIDE; ELECTRONIC-STRUCTURE; PERFORMANCE; EFFICIENCY; ALLOYS; PBSE; ENHANCEMENT; IMPURITIES; SELENIDE; FIGURE;

D O I：

10.1063/1.4748363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

PbTe is a promising thermoelectric material and its dimensionless figure of merit, zT, can be enhanced by optimizing the band structure near the Fermi level via chemical doping. This letter describes the dopants effect on bandgap, E-g, and effective mass, m*, for disordered La- and I-doping, based on theoretical calculations. E-g increases with increasing La and decreases with increasing I concentration. While m* increases upon La-doping, I-doping does not change m* noticeably. The calculated results are qualitatively consistent with the experimental results and explain the higher zT, up to 1.4 at 800 K, observed in I-doping PbTe compared to La-doping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748363]

引用

页数：3

共 37 条

[1] FAST KORRINGA-KOHN-ROSTOKER COHERENT POTENTIAL APPROXIMATION AND ITS APPLICATION TO FCC NI-FE SYSTEMS [J].

AKAI, H .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (43) :8045-8063

[2] ELECTRONIC-STRUCTURE OF NI-PD ALLOYS CALCULATED BY THE SELF-CONSISTENT KKR-CPA METHOD [J].

AKAI, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (02) :468-474

[3] Electronic structure, structural properties, and dielectric functions of IV-VI semiconductors: PbSe and PbTe [J].

Albanesi, EA ;

Okoye, CMI ;

Rodriguez, CO ;

Blanca, ELPY ;

Petukhov, AG .

PHYSICAL REVIEW B, 2000, 61 (24) :16589-16595

[4] Donorlike behavior of rare-earth impurities in PbTe [J].

Alekseeva, GT ;

Vedernikov, MV ;

Gurieva, EA ;

Konstantinov, PP ;

Prokof'eva, LV ;

Ravich, YI .

SEMICONDUCTORS, 1998, 32 (07) :716-719

[5] A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO [J].

DALVEN, R .

INFRARED PHYSICS, 1969, 9 (04) :141-+

[6] Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states [J].

Heremans, Joseph P. ;

Jovovic, Vladimir ;

Toberer, Eric S. ;

Saramat, Ali ;

Kurosaki, Ken ;

Charoenphakdee, Anek ;

Yamanaka, Shinsuke ;

Snyder, G. Jeffrey .

SCIENCE, 2008, 321 (5888) :554-557

[7] Resonant levels in bulk thermoelectric semiconductors [J].

Heremans, Joseph P. ;

Wiendlocha, Bartlomiej ;

Chamoire, Audrey M. .

ENERGY & ENVIRONMENTAL SCIENCE, 2012, 5 (02) :5510-5530

[8] Cubic AgPbmSbTe2+m:: Bulk thermoelectric materials with high figure of merit [J].

Hsu, KF ;

Loo, S ;

Guo, F ;

Chen, W ;

Dyck, JS ;

Uher, C ;

Hogan, T ;

Polychroniadis, EK ;

Kanatzidis, MG .

SCIENCE, 2004, 303 (5659) :818-821

[9]

ISKENDERZADE ZA, 1990, INORG MATER+, V26, P366

[10] Combining alloy scattering of phonons and resonant electronic levels to reach a high thermoelectric figure of merit in PbTeSe and PbTeS alloys [J].

Jaworski, Christopher M. ;

Wiendlocha, Bartlomiej ;

Jovovic, Vladimir ;

Heremans, Joseph P. .

ENERGY & ENVIRONMENTAL SCIENCE, 2011, 4 (10) :4155-4162

← 1 2 3 4 →