Structural, thermal and electrical properties of the semiconductor system Ag(1-x)CuxInSe2

被引:5
作者
Albornoz, J. G. [1 ]
Rojas L, R. M. [2 ]
Merino, J. M. [3 ]
Leon, M. [3 ]
机构
[1] Univ Carabobo, FACYT UC, Fac Ciencias & Tecnol, Dept Fis, Valencia 2001, Venezuela
[2] UAM, CSIC, Inst Ciencia Mat, Madrid 28049, Spain
[3] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Aplicada, E-28049 Madrid, Spain
关键词
Chalcogenides; Semiconductors; Electrical properties; Phase transitions; Transport properties; THIN-FILMS; OPTICAL-ABSORPTION; SINGLE-CRYSTALS; RECENT PROGRESS; SOLAR-CELLS; CUINSE2; AGINSE2; ALLOYS; GROWTH; CUXAG1-XINSE2;
D O I
10.1016/j.jpcs.2013.08.003
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper presents a study of bulk samples synthesized of the Ag1-xCuxInSe2 semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag1-xCuxInSe2 system for x <= 0.4 are dominated by n-AgInSe2, while for x > 0.4, these are in the domain of p-CuInSe2. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag2Se and InSe) in small proportion were identified by XRD and DTA. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
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