Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

被引：20
|
作者：
Liu, XQ [1 ]
Li, N
Chen, XS
Lu, W
Xu, WL
Yuan, XZ
Li, N
Shen, SC
Yuan, S
Tan, HH
Jagadish, C
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期
关键词：
GaAs/AlGaAs quantum well; infrared; photodetector; interdiffusion wavelength tuning;
D O I：
10.1143/JJAP.38.5044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7 mu m red-shift for 900 degrees C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. nle large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900 degrees C annealed sample than as-grown one,which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to our-diffusion of Si-dopant and degradation of interfaces.
引用
收藏
页码：5044 / 5045
页数：2
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