Growth of Mg films on H-terminated Si (111)

被引：7

作者：

Saiki, K ^{[1
]}

Nishita, K ^{[1
]}

Ariga, Y ^{[1
]}

Koma, A ^{[1
]}

机构：

[1] Univ Tokyo, Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.581959

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of Mg has been examined on H-terminated Si (111) and the grown film was characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Mg grows epitaxially on H-Si (111) in island form with an epitaxial orientation of Mg(0001) [11 (2) over bar 0]/Si(111)[1(1) over bar 0 0]. At the very initial stages of growth a contraction of the Mg lattice is observed, which might cause a shift in plasmon energy of the initial Mg aggregate. (C) 1999 American Vacuum Society. [S0734-2101(99)04205-0].

引用

页码：2911 / 2914

页数：4

共 50 条

[41] Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si
Gokce, Bilal
Adles, Eric J.
Aspnes, David E.
Gundogdu, Kenan
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
[42] Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si
Gokce, Bilal
Adles, Eric J.
Aspnes, David E.
Gundogdu, Kenan
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2010, 107 (41) : 17503 - 17508
[43] Growth of completely (110)- and (111)-oriented MgO films on H-terminated (100) silicon substrate by pulsed laser deposition
Chen, XY
Yang, B
Liu, ZG
Shi, LJ
APPLIED SURFACE SCIENCE, 1998, 135 (1-4) : 233 - 237
[44] Activation of surface hydroxyl groups for molecular reactions by modification of H-terminated Si(111) surfaces
Chabal, Yves J.
Thissen, Peter
Peixoto, Tatiana
Seitz, Oliver
Vega, Abraham
Longo, Roberto C.
Cho, Kyeongjae
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2012, 244
[45] Effect of preparation-induced surface morphology on the stability of H-terminated Si(111) and Si(100) surfaces
Angermann, H
Henrion, W
Rebien, M
Röseler, A
ULTRA CLEAN PROCESSING OF SILICON SURFACES V, 2003, 92 : 179 - 182
[46] Electronic structure of the ideally H-terminated Si(111)-(1X1) surface
Gallego, S
Avila, J
Martin, M
Blase, X
Taleb, A
Dumas, P
Asensio, MC
PHYSICAL REVIEW B, 2000, 61 (19): : 12628 - 12631
[47] MEDIUM-ENERGY ION-SCATTERING INVESTIGATION OF HOMOEPITAXY ON H-TERMINATED SI(111)
COPEL, M
TROMP, RM
SURFACE SCIENCE, 1995, 337 (1-2) : L773 - L776
[48] Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 x 1) surface
Kawaguchi, Ryo
Eguchi, Toyoaki
Suto, Shozo
SURFACE SCIENCE, 2019, 686 : 52 - 57
[49] Chemisorption of OH on the H-terminated Si(001) surface
Goto, H
Hirose, K
Sakamoto, M
Sugiyama, K
Inagaki, K
Tsuchiya, H
Kobata, I
Ono, T
Mori, Y
COMPUTATIONAL MATERIALS SCIENCE, 1999, 14 (1-4) : 77 - 79
[50] Self-directed growth of benzonitrile line on H-terminated Si(001) surface
Lee, JY
Cho, JH
JOURNAL OF CHEMICAL PHYSICS, 2004, 121 (16): : 8010 - 8013

← 1 2 3 4 5 →