Growth of Mg films on H-terminated Si (111)

被引：7

作者：

Saiki, K ^{[1
]}

Nishita, K ^{[1
]}

Ariga, Y ^{[1
]}

Koma, A ^{[1
]}

机构：

[1] Univ Tokyo, Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.581959

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth of Mg has been examined on H-terminated Si (111) and the grown film was characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Mg grows epitaxially on H-Si (111) in island form with an epitaxial orientation of Mg(0001) [11 (2) over bar 0]/Si(111)[1(1) over bar 0 0]. At the very initial stages of growth a contraction of the Mg lattice is observed, which might cause a shift in plasmon energy of the initial Mg aggregate. (C) 1999 American Vacuum Society. [S0734-2101(99)04205-0].

引用

页码：2911 / 2914

页数：4

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