High-temperature MEMS heater platforms:: Long-term performance of metal and semiconductor heater materials

被引：72

作者：

Spannhake, Jan ^{[1
]}

Schulz, Olaf

Helwig, Andreas

Krenkow, Angelika

Muller, Gerhard

Doll, Theodor

机构：

[1] EADS Deitschland GmbH, Corp Res Ctr, D-81663 Munich, Germany

[2] Inst Microtechnol Mainz, D-55129 Mainz, Germany

来源：

SENSORS | 2006年 / 6卷 / 04期

关键词：

hotplate; heater metallisation; high-temperature stability; electro-migration; doped silicon; doped metal oxide; antimony doped tin oxide;

D O I：

10.3390/s6040405

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Micromachined thermal heater platforms offer low electrical power consumption and high modulation speed, i.e. properties which are advantageous for realizing non-dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by employing different kinds of metallic and semiconductor heater materials. Our results clearly reveal the superior high-temperature performance of semiconductor over metallic heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be attained using heavily antimony-doped tin dioxide (SnO2: Sb) heater elements.

引用

页码：405 / 419

页数：15

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