Nitrogen implantation in 4H and 6H-SiC

被引：5

作者：

Gimbert, J

Billon, T

Ouisse, T

Grisolia, J

Ben-Assayag, G

Jaussaud, C

机构：

[1] CEA, Dept Microtechnol, LETI, F-38054 Grenoble 9, France

[2] ENSERG, CNRS UMRS 5531, Lab Phys Composants Semicond, F-38016 Grenoble, France

[3] CNRS, CEMES, F-31055 Toulouse, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

Hall effect; ion implantation; nitrogen; silicon carbide;

D O I：

10.1016/S0921-5107(98)00536-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have undertaken a physico-chemical and electrical characterisation of nitrogen ion implantations in SiC epitaxies using a large variety of experimental conditions. The samples were implanted either at room temperature (RT) or at 650 degrees C (HT). SIMS measurements were done to compare the depth-distributions with results from TRIM92 simulations. Transmission electron microscope (TEM) analysis of these samples was carried out on cross-sectional samples using Weak Beam Dark Field imaging conditions. Van der Pauw test patterns were realised to extract the thermal dependencies of resistivity and mobility. A comparison with the conductivity and mobility obtained on films doped during epitaxy and implanted films is done. It is shown that, in the lower dose range, the ionisation and activation does not depend on the implantation temperature. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：368 / 372

页数：5